Copper Doped ZnO Thin Film for Ultraviolet Photodetector with Enhanced Photosensitivity

摘要

Ultraviolet photoconductivity in Copper doped ZnO (Cu:ZnO) thin films synthesized by sol-gel technique is investigated. Response characteristics of Pure ZnO thin film and Cu:ZnO thin film UV photodetector with 1.3 at. wt % Cu doping biased at 5 V for UV radiation of λ = 365 nm and intensity = 24 μwatt/cm~2 has been studied. Cu:ZnO UV photodetector is found to exhibit a high photocoductive gain (K = 1.5×10~4) with fast recovery (T_(90%) = 23s) in comparison to pure ZnO thin film based photodetector (K = 4.9×10~1 and T_(90%) = 41s). Cu~(2+) ions have been substituted in ZnO lattice which has been confirmed by X-ray diffraction (XRD) and Raman spectroscopy leading to lowering of dark current (I_(off) ～ 1.44 nA). Upon UV illumination, more electron hole pairs are generated in the photodetector due to the high porosity and roughness of the surface of the film which favours adsorption of more oxygen on the surface of the photodetector. The photogenerated holes recombined with the trapped electrons, increasing the concentration of photogenerated electrons in the conduction band enhancing the photocurrent (I_(on) ～ 0.02 mA) of the Cu:ZnO photodetector.