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Enhanced Ultraviolet Photodetector Based on Mg-Doped ZnO Nanorods Films

机译:基于Mg掺杂ZnO纳米杆膜的增强型紫外光探测器

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摘要

Magnesium-doped zinc oxide (ZnO: Mg) nanorods and nanotubes films were prepared by hydrothermal method deposited on glass substrates. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), photoluminescence (PL), and optical absorption spectroscopy (UV) were performed to characterize the prepared films. X-ray diffraction analysis showed a decrease in the lattice parameters of Mg doped ZnO NRs. The Photoluminescence of the undoped and Mg-doped ZnO NRs displayed a near band edge. At 10 V bias, the metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector performance of the Mg-doped ZnO prepared for various Mg concentrations of 0.0, 0.02, and 0.06 was investigated under radiation of 40μW/cm2 at the wavelengths of 365 and 385 nm UV light. The responsivity, detectivity and quantum efficiency of Mg-doped based on MSM detector were 0.118A/W, 1.0579*1012 and 40.05157 under UV of wavelength 365nm respectively.
机译:通过沉积在玻璃基板上的水热法制备掺杂氧化镁氧化锌(ZnO:Mg)纳米棒和纳米管膜。进行X射线衍射(XRD),扫描电子显微镜(SEM),能量分散X射线光谱(EDX),光致发光(PL)和光学吸收光谱(UV)以表征制备的薄膜。 X射线衍射分析显示Mg掺杂ZnO NRS的晶格参数的降低。未掺杂和Mg掺杂的ZnO NR的光致发光显示近带边缘。在10V偏压下,在波长的40μW/ cm2的辐射下,在40μw/ cm2的辐射下研究了Mg-掺杂ZnO的金属半导体 - 金属(MSM)紫外(UV)光电探测器性能。 365和385 nm uv光。基于MSM检测器的Mg掺杂的响应性,探测和量子效率分别为0.118A / W,1.0579 * 1012和40.05157分别在波长365nm的紫外线下。

著录项

  • 作者

    Hussein Abdullah Hameed;

  • 作者单位
  • 年度 2019
  • 总页数
  • 原文格式 PDF
  • 正文语种 ara;eng
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