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Zinc nitride thin films: basic properties and applications

机译:氮化锌薄膜:基本性质和应用

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摘要

Zinc nitride films can be deposited by radio frequency magnetron sputtering using a Zn target at substrate temperatures lower than 250 °C. This low deposition temperature makes the material compatible with flexible substrates. The asgrown layers present a black color, polycrystalline structures, large conductivities, and large visible light absorption. Different studies have reported about the severe oxidation of the layers in ambient conditions. Different compositional, structural and optical characterization techniques have shown that the films turn into ZnO polycrystalline layers, showing visible transparency and semi-insulating properties after total transformation. The oxidation rate is fairly constant as a function of time and depends on environmental parameters such as relative humidity or temperature. Taking advantage of those properties, potential applications of zinc nitride films in environmental sensing have been studied in the recent years. This work reviews the state-of-the-art of the zinc nitride technology and the development of several devices such as humidity indicators, thin film (photo)transistors and sweat monitoring sensors.
机译:氮化锌膜可通过射频磁控溅射,使用Zn靶材在低于250°C的基板温度下沉积。如此低的沉积温度使该材料与柔性基板兼容。共生层呈现黑色,多晶结构,大电导率和大可见光吸收率。不同的研究报道了在环境条件下层的严重氧化。不同的组成,结构和光学表征技术表明,薄膜变成了ZnO多晶层,在完全转变后表现出可见的透明性和半绝缘性。氧化速率作为时间的函数相当恒定,并且取决于环境参数,例如相对湿度或温度。利用这些特性,近年来已经研究了氮化锌膜在环境感测中的潜在应用。这项工作回顾了氮化锌技术的最新发展以及诸如湿度指示器,薄膜(光电)晶体管和汗液监测传感器等多种设备的发展。

著录项

  • 来源
    《Oxide-based materials and devices VIII》|2017年|101051B.1-101051B.6|共6页
  • 会议地点 San Francisco(US)
  • 作者单位

    Grupo de Electronica y Semiconductores, Facultad de Ciencias, Universidad Autonoma de Madrid, c/ Francisco Tomas y Valiente 7, Madrid 28049, Spain;

    Grupo de Electronica y Semiconductores, Facultad de Ciencias, Universidad Autonoma de Madrid, c/ Francisco Tomas y Valiente 7, Madrid 28049, Spain;

    Bendable Electronics and Sensing Technologies Group, School of Engineering, University of Glasgow, G12 8QQ, UK;

    Instituto de Ciencias, Benemerita Universidad Autonoma de Puebla, Puebla 72570, Mexico;

    Institute de Ciencia de Materiales, Consejo Superior de Investigaciones Cientificas, E-28049 Madrid, Spain;

    Grupo de Electronica y Semiconductores, Facultad de Ciencias, Universidad Autonoma de Madrid, c/ Francisco Tomas y Valiente 7, Madrid 28049, Spain;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Zinc nitride; thin film transistors; humidity sensors; perspiration sensors;

    机译:氮化锌薄膜晶体管;湿度传感器;汗水传感器;

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