首页> 外国专利> ZINC TARGET INCLUDING FLUORINE, METHOD OF FABRICATING ZINC NITRIDE THIN FILM USING SAME, AND METHOD OF FABRICATING THIN FILM TRANSISTOR

ZINC TARGET INCLUDING FLUORINE, METHOD OF FABRICATING ZINC NITRIDE THIN FILM USING SAME, AND METHOD OF FABRICATING THIN FILM TRANSISTOR

机译:包含氟的锌靶,使用相同的方法制备氮化锌薄膜的方法以及制备薄膜晶体管的方法

摘要

Disclosed is a zinc target including fluorine, a method of fabricating a zinc nitride thin film using the same, and a method of fabricating a thin film transistor. The disclosed method of fabricating a zinc nitride thin film including fluorine comprises the steps of mounting a fluorine contained zinc target in a sputtering chamber; supplying nitrogen gas and inert gas to the chamber; and forming the fluorine contained zinc nitride thin film on a substrate.;COPYRIGHT KIPO 2015
机译:公开了一种包含氟的锌靶,使用其制造氮化锌薄膜的方法以及薄膜晶体管的方法。所公开的包括氟的氮化锌薄膜的制造方法包括以下步骤:将含氟的锌靶材安装在溅射室中;向腔室供应氮气和惰性气体;并在基板上形成含氟氮化锌薄膜。; COPYRIGHT KIPO 2015

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