ZINC TARGET INCLUDING FLUORINE, METHOD OF FABRICATING ZINC NITRIDE THIN FILM BY USING THE SAME, AND METHOD OF FABRICATING THIN FILM TRANSISTOR BY USING THE SAME

摘要

Provided are fluorine-containing zinc targets, methods of fabricating a zinc oxynitride thin film by using the zinc targets, and methods of fabricating a thin film transistor by using the zinc oxynitride thin film. The methods include mounting a fluorine-containing zinc target and a substrate in a sputtering chamber, supplying nitrogen gas and inert gas into the sputtering chamber, and forming a fluorine-containing zinc oxynitride thin film on the substrate.