首页> 外文会议>Optoelectronic Devices and Integration pt.1 >Preparation and properties of highly c-axis oriented Sr_(0.6)Ba_(0.4)Nb_2O_6 thin films by the Sol-Gel process
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Preparation and properties of highly c-axis oriented Sr_(0.6)Ba_(0.4)Nb_2O_6 thin films by the Sol-Gel process

机译:Sol-Gel法制备高c轴取向Sr_(0.6)Ba_(0.4)Nb_2O_6薄膜及其性能

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摘要

Highly oriented ferroelectric strontium barium niobate (Sr_(0.6)Ba_(0.4)Nb_2O_6) thin films were prepared on P-type Si(100) substrate by the Sol-Gel process. The XRD patterns of the SBN films show that SBN film prepared by using NbCl_5, KOH as raw materials performed a highly c-axis preferred orientation perpendicular to the Si substrate, better than films that was prepared using Nb(OC_2H_5)_5 as starting agents. It may be duo to the existence of the potassium ion that not be filtered out completely during the preparation of the niobium alkoxide. The characteristics of D-F and C-V curves were obtained for SBN/Si film. The film exhibits high dielectric constant. In order to investigate ferroelectric characteristics further, the P-E loops of the SBN/Pt/Si were also measured. The films show better optical properties, transmittance of Sr_(0.6)Ba_(0.4)Nb_2O_6 films on MgO(001) and SiO_2 substrates was more than 60% at the range from 450 to 850nm, refractive index was measured to be 2.14 and 2.12 on the MgO and SiO_2 substrate at 633nm respectively.
机译:通过Sol-Gel工艺在P型Si(100)衬底上制备了高取向铁电铌酸锶钡(Sr_(0.6)Ba_(0.4)Nb_2O_6)薄膜。 SBN膜的XRD图谱表明,以NbCl_5,KOH为原料制备的SBN膜,与Nb(OC_2H_5)_5为起始剂制备的膜相比,在垂直于Si衬底的方向上具有较高的c轴优先取向。钾离子的存在可能是由于在制备铌醇盐过程中不能完全滤出钾离子。获得了SBN / Si膜的D-F和C-V曲线的特征。该膜表现出高介电常数。为了进一步研究铁电特性,还测量了SBN / Pt / Si的P-E回路。该膜表现出较好的光学性能,在450〜850nm范围内,MgO(001)和SiO_2衬底上Sr_(0.6)Ba_(0.4)Nb_2O_6膜的透射率大于60%,折光率分别为2.14和2.12。 MgO和SiO_2衬底分别在633nm处。

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