- MOCVD AND ANNEALING PROCESSES FOR C-AXIS ORIENTED FERROELECTRIC THIN FILMS

摘要

PURPOSE: Metal organic chemical vapor deposition(MOCVD) and annealing processes for a c-axis oriented ferroelectric thin film is provided to form a c-axis oriented Pb5Ge3O11(PGO) thin film having low surface roughness by performing an MOCVD process at a low temperature and an annealing process at a high temperature. CONSTITUTION: A substrate is prepared. A ferroelectric material layer is deposited by an MOCVD process in which a precursor solution having a ferroelectric material concentration of about 0.1 M/L at a vaporizer temperature of between about 140 deg.C to 200 deg.C is used. The substrate and the ferroelectric material are annealed at a temperature between about 500 deg.C to 560 deg.C for between about 30 minutes to 120 minutes.