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MOCVD and annealing processes for C-axis oriented ferroelectric thin films
MOCVD and annealing processes for C-axis oriented ferroelectric thin films
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机译:C轴取向铁电薄膜的MOCVD和退火工艺
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摘要
A method of fabricating a c-axis ferroelectric thin film includes preparing a substrate; depositing a layer of ferroelectric material by metal organic chemical vapor deposition, including using a precursor solution having a ferroelectric material concentration of about 0.1 M/L at a vaporizer temperature of between about 140° C. to 200° C.; and annealing the substrate and the ferroelectric material at a temperature between about 500° C. to 560° C. for between about 30 minutes to 120 minutes.
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