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MOCVD AND ANNEALING PROCESSES FOR C-AXIS ORIENTED FERROELECTRIC THIN FILM
MOCVD AND ANNEALING PROCESSES FOR C-AXIS ORIENTED FERROELECTRIC THIN FILM
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机译:面向C轴的铁电薄膜的MOCVD和退火工艺
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摘要
PROBLEM TO BE SOLVED: To provide manufacturing processes of MOCVD, annealing, etc., for a ferroelectric thin film having suitable orientation. SOLUTION: This method for manufacturing the c-axis oriented ferroelectric thin film includes steps for preparing a substrate, depositing a layer of ferroelectric material by metal organic chemical vapor phase epitaxy (MOCVD) including a step for using a precursor solution having ferroelectric material concentration of about 0.1 M/L at a vaporizer temperature between about 140 deg.C to 200 deg.C, and annealing the substrate and the ferroelectric material at a temperature between 500 deg.C to 560 deg.C for between about 30 minutes to 120 minutes.
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机译:解决的问题:提供具有适当取向的铁电薄膜的MOCVD,退火等制造工艺。解决方案:此制造c轴取向铁电薄膜的方法包括以下步骤:准备基板,通过金属有机化学气相外延(MOCVD)沉积一层铁电材料,包括使用铁电材料浓度为20%的前体溶液的步骤。在约140℃至200℃之间的蒸发器温度下约0.1 M / L,并在500℃至560℃之间的温度下将衬底和铁电材料退火约30分钟至120分钟。
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