Application of CVD antireflective-layer process for sub-half-micrometer devices

摘要

Abstract: The lithographic performance and process applicabilityof the anti-reflective-layer (ARL) process usingamorphous carbon have been studied in i-line and KrFexcimer laser lithography. The ARL thickness of 30 nmwas used. With ARL, the reflectivity from the siliconsubstrate reduced to less than 30%. The reduction ofthe reflectivity with ARL process was effective notonly for the silicon substrate but also for thetungsten silicide substrate and aluminum substrate. Thepattern profile and depth of focus in the resist on ARLwere almost the same as those without ARL. The ARLprocess has been successfully applied for thefabrication of 0.35 $mu@m CMOS polycide gatefabrication using i-line lithography and 0.35 $mu@mDRAM aluminum wiring using excimer laser lithography.!3