Linear AlGaAs/GaAs waveguide modulator at lambda=1.32 um utilizing lateral mode interference

摘要

Abstract: Optical modulators based on electrooptically-induced lateral mode interference in multimode AlGaAs/GaAs waveguides at $lambda $EQ 1.32 $mu@m are investigated for high-frequency linear applications. The key design issue is achieving higher slope efficiency while maintaining significant linearity improvements over sinusoidal interference-based modulator designs. We report experimental results which demonstrate indirectly a reduction in intermodulation distortion of 48 dB compared to an ideal Mach-Zehnder interferometer.!17