Compensation of high-NA mask topography effects by using object modified Kirchhoff model for 65 and 45nm nodes

摘要

ArF immersion lithography has opened the road towards increased optical resolution at the 193nm wavelength. Consequently, keeping the same 4X optical demagnification factor, the dimensions on the mask scale down to sub-wavelength values when we enter the 45nm node. At such dimensions, mask topography, mask type and materials as well as the polarization state of the light will influence the diffraction spectrum of a layout. As a result the image from high NA lithographic systems depends on the polarization state and intensities of the interfering orders. In general, with smaller features on the mask stronger polarization changes occur. Apart from the polarization changes in diffraction orders the total intensity in a diffraction order is also different from that predicted by standard scalar-Kirchhoff diffraction approximation used in present OPC packages. The difference in intensities of diffraction orders due to different mask materials and topography is the more dominating factor leading to through pitch CD errors when the scalar-Kirchhoff model is used for layout adjustment. Based on findings and classification of topography induced effects, a deviation-driver from scalar diffraction model was identified. This paper discusses a solution to compensate for topography effects while using the scalar diffraction model for reticle treatment. The area of applicability of such a scalar model, its advantages and limitations are illustrated with simulations and experiments.