首页> 外文会议>Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997 >Optical study of the influence of oxygen on the synthesis of SiC-buried layer in Cz-Si and Fz-Si
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Optical study of the influence of oxygen on the synthesis of SiC-buried layer in Cz-Si and Fz-Si

机译:氧对Cz-Si和Fz-Si中SiC埋层合成的影响的光学研究

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摘要

Abstract: The peculiarities of ion-beam synthesis of buried SiC layers in silicon wafers have been studied by Raman and infrared spectroscopy. The effect of oxygen and mechanical stresses on SiC layer formation has been also investigated. It was shown that compressive stresses and SiO$-2$/ precipitates with the size larger than some critical value stimulate nucleation and formation of buried SiC layer.!4
机译:摘要:利用拉曼光谱和红外光谱研究了硅片中埋入式SiC层的离子束合成特性。还研究了氧气和机械应力对SiC层形成的影响。结果表明,尺寸大于某个临界值的压缩应力和SiO $ -2 $ /沉淀物会促进形核和形成埋藏的SiC层。4

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