Characterization of APDs fabricated by 0.18 μm CMOS process in blue wavelength region

机译：通过0.18μmCMOS工艺在蓝色波长区域制造的APD的特性

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《OECC 2012;Opto-Electronics and Communications Conference》|2012年|p.509- 510|共2页
会议地点 Busan(KR)
作者
Shimotori, Toshiyuki; Maekita, Kazuaki; Maruyama, Takeo; Iiyama, Koichi;
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Division of Electrical and Computer Engineering Kanazawa University Kakuma-machi Kanazawa Ishikawa 920-1192 Japan;

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1. Characterization of Active Pixel Sensors fabricated in CMOS 0.18 μm technology [J] . D. Passeri, A. Marras, D. Biagetti, Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2007,第3期

机译：采用CMOS 0.18μm技术制造的有源像素传感器的特性
2. Design of Psub-SMPD and DNW-SMPD fabricated in a standard 0.18-?μm CMOS process [J] . Rong Wang, Chen Fan, Zhi-Gong Wang IEICE Electronics Express . 2017,第14期

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3. A fractional-N frequency divider for multi-standard wireless transceiver fabricated in 0.18 μm CMOS process [J] . Jiafeng Wang, Xiangning Fan, Xiaoyang Shi, Journal of Semiconductors . 2017,第12期

机译：用于0.18μmCMOS工艺中制造的多标准无线收发器的分数N分频器
4. Characterization of APDs fabricated by 0.18 #x03BC;m CMOS process in blue wavelength region [C] . Shimotori Toshiyuki, Maekita Kazuaki, Maruyama Takeo, Opto-Electronics and Communications Conference . 2012

机译：由0.18＆＃x03bc制备的APDS的表征;在蓝波长区域中的M CMOS过程
5. Design, Layout, and Testing of SiGe APDs Fabricated in a BiCMOS Process [D] . Gentry, Dane. 2018

机译：在BICMOS过程中制造的SiGe APDS的设计，布局和测试
6. An Acetone Microsensor with a Ring Oscillator Circuit Fabricated Using the Commercial 0.18 μm CMOS Process [O] . Ming-Zhi Yang, Ching-Liang Dai, Po-Jen Shih 2014

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7. High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region [O] . Koichi IIYAMA, Takeo MARUYAMA, Ryoichi GYOBU, 2018

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Characterization of APDs fabricated by 0.18 μm CMOS process in blue wavelength region

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