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THz quantum cascade lasers for operation above cryogenic temperatures

机译:THz量子级联激光器,可在低温下工作

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摘要

High temperature operation of terahertz (THz) sources based on quantum cascade lasers (QCLs) is discussed. THz QCLs are compact, powerful sources but can only operate at cryogenic temperatures. State-of-the art THz QCLs are made with GaAs/AlGaAs heterostructures and use a single composition of AlGaAs for the barrier material. It was recently shown that multi-composition barriers in the band structure can result in gain > loss at temperature as high as ~240K. We demonstrate early experimental results that yield QCLs that operate up to 184K - similar to QCLs based on single composition barrier designs. An alternative method of producing room-temperature THz is based on intra-cavity difference-frequency generation (DFG) in mid-infrared (mid-IR) QCLs. Here we report devices with record conversion efficiency. THz DFG QCLs reported previously are highly inefficient since THz radiation produced more than -100 μm away from the exit facet is fully absorbed due to high THz losses in the QCL waveguide. Our lasers use a non-collinear Cherenkov DFG scheme to extract THz radiation from the active region. Dual-color mid-IR quantum cascade lasers with integrated giant optical nonlinearity are grown on semi-insulating (S.I.) InP substrates. THz radiation is emitted at an angle into the substrate with respect to the mid-infrared pumps. Since S.I. InP is virtually lossless to THz radiation, this scheme allows for efficient extraction of THz radiation along the whole waveguide length. As a result, our sources demonstrate large mid-infrared-to-THz conversion efficiency. Devices tested at room-temperature produced 18μW peak-power and 75μW/W~2 conversion efficiency.
机译:讨论了基于量子级联激光器(QCL)的太赫兹(THz)源的高温操作。太赫兹QCL是紧凑而强大的信号源,但只能在低温下工作。最新的THz QCL由GaAs / AlGaAs异质结构制成,并使用AlGaAs的单一成分作为阻挡层材料。最近发现,在高达240K的温度下,能带结构中的多组分势垒会导致增益>损耗。我们证明了产生高达184K的QCL的早期实验结果-与基于单一成分屏障设计的QCL相似。产生室温THz的另一种方法是基于中红外(mid-IR)QCL中的腔内差异频率生成(DFG)。在这里,我们报告具有创纪录转换效率的设备。先前报道的THz DFG QCL效率极低,因为由于QCL波导中很高的THz损耗,离出射面超过-100μm的THz辐射已被完全吸收。我们的激光器使用非共线的Cherenkov DFG方案从有源区域提取THz辐射。具有集成的巨大光学非线性的双色中红外量子级联激光器在半绝缘(S.I.)InP衬底上生长。相对于中红外泵浦,THz辐射以一定角度发射到基板中。由于S.I. InP实际上对THz辐射无损,因此该方案可沿整个波导长度有效提取THz辐射。结果,我们的信号源证明了中红外到太赫兹的转换效率很高。在室温下测试的设备产生的峰值功率为18μW,转换效率为75μW/ W〜2。

著录项

  • 来源
    《Novel in-plane semiconductor lasers XII》|2013年|864014.1-864014.6|共6页
  • 会议地点 San Francisco CA(US)
  • 作者单位

    Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78758 USA;

    Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78758 USA;

    Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching,Germany,Brolis Semiconductors Ltd., Moletupl. 73, 14259 Vilnius, Lithuania;

    Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78758 USA;

    Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching,Germany;

    Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching,Germany;

    Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching,Germany;

    Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching,Germany;

    Institutefor Nanoelectronics, Technische Universitaet Muenchen, D-80333 Muenchen, Germany;

    Institutefor Nanoelectronics, Technische Universitaet Muenchen, D-80333 Muenchen, Germany;

    Institutefor Nanoelectronics, Technische Universitaet Muenchen, D-80333 Muenchen, Germany;

    Institutefor Nanoelectronics, Technische Universitaet Muenchen, D-80333 Muenchen, Germany;

    Department of Electrical and Cpmputer Engineering, University of Waterloo, Waterloo, ON, N2L 3G, Canada;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Terahertz sources; difference frequency generation; terahertz quantum cascade laser;

    机译:太赫兹源;差频产生;太赫兹量子级联激光器;

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