GaInAsSb/AlGaAsSb Laser Diodes for the 2-3 μm range

摘要

We review here our results concerning laser diodes emitting at 2.38 μm and 2.60 μm. We present an original method allowing to determine the monomolecular, radiative and Auger recombination coefficients A, B and C, as well as the transparency carrier density N_(tr), the internal loss α_i and the gain coefficient g_o from the differential efficiency and the threshold current density obtained with different laser diodes. We show how these parameters can be used to optimize the number of quantum wells and explain the differences existing between laser diodes emitting at 2.38 and 2.60 μm. At 2.38 μm, we obtained a threshold current density of 76 A/cm~2 with a single quantum well laser diode and at 2.60 μm, a J_(th) of 152 A/cm~2 with a double quantum well laser diode. These threshold current densities can be compared favorably to the best reported values in the 0.85-3.0 μm range.