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Device integration on indium phosphide for photonic switching a

机译:磷化铟上的器件集成用于光子转换

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Abstract: The development of broadband telecommunication networks has led to a growing interest in photonic devices so that monolithic integration on InP material has been intensively studied to get miniaturization, high complexity, advanced functions and consequently cost reduction. We illustrate in this paper the continuous progress that has been done to make technology mature enough for integration through the fabrication of two types of Photonic Integrated Circuits: a 4 $MUL 4 switch matrix and a multifunctional access node switch. !12
机译:摘要:宽带电信网络的发展引起了人们对光子器件的日益增长的兴趣,因此对InP材料上的单片集成进行了深入研究,以实现小型化,高复杂性,先进的功能并因此降低成本。我们在本文中说明了通过制造两种类型的光子集成电路,使技术足以集成的成熟技术所取得的持续进展:4 $ MUL 4开关矩阵和多功能访问节点开关。 !12

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