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Extreme-ultraviolet and electron beam lithography processing using water developable resist material

机译:使用可水显影抗蚀剂材料的极紫外和电子束光刻处理

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In order to achieve the use of pure water in the developable process of extreme-ultraviolet and electron beam lithography, instead of conventionally used tetramethylammonium hydroxide and organic solvents, a water developable resist material was designed and developed. The water-developable resist material was derived from woody biomass with beta-linked disaccharide unit for environmental affair, safety, easiness of handling, and health of the working people. 80 run dense line patterning images with exposure dose of 22 μC/cm~2 and CF_4 etching selectivity of 1.8 with hardmask layer were provided by specific process conditions. The approach of our water-developable resist material will be one of the most promising technologies ready to be investigated into production of medical device applications.
机译:为了在极紫外和电子束光刻的可显影工艺中实现纯水的使用,代替常规使用的氢氧化四甲基铵和有机溶剂,设计并开发了可水显影的抗蚀剂材料。可水显影的抗蚀剂材料是从木质生物质中获得的,该木质生物质具有β-连接的二糖单元,对环境,安全,易于操作以及劳动者的健康均有利。通过特定的工艺条件提供了80幅密集线图案图像,曝光剂量为22μC/ cm〜2,CF_4刻蚀选择性为硬掩模层,为1.8。我们可水显影的抗蚀剂材料的方法将是准备用于医疗设备应用生产的最有前途的技术之一。

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