Buffer Assisted Epitaxial Growth of Bi_(1.5)Zn_1Nb_(1.5)O_7 Thin Films by Pulsed Laser Deposition for Optoelectronic Applications

摘要

Bi_(1.5)Zn_1Nb_(1.5)O_7 (BZN) epitaxial thin films were prepared on AI2O3 with a double ZnO buffer layer by pulsed laser deposition. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The sharp intense spots in the SAED pattern also indicates the highly crystalline nature of BZN thin film. The electrical properties of the as deposited thin films were investigated by patterning an inter digital capacitor (IDC) structure on BZN. A high tunability was observed in this epitaxially grown thin films.