This work reports on the effort to develop a low voltage, high performance RF MEMS relay within an existing MEMS process. The 54 × 43 µm2 relay achieved an insertion loss of under 0.2 dB from DC to 23.75 GHz at 5-V and an isolation from DC to 18-GHz of better than 30-dB. Additionally, the smal stiff structure achieved switching times of sub 100-ns with a 7-V actuation voltage and temperature measurements indicate stable operation from 0 °C to 125 °C. The relay was fabricated within an existing digital MEMS relay process, enabling integrated digital control for future RF systems.
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