首页> 外国专利> A fabrication method for making a planar cantilever, low surface leakage, reproducible and reliable metal dimple contact micro-relay MEMS switch,

A fabrication method for making a planar cantilever, low surface leakage, reproducible and reliable metal dimple contact micro-relay MEMS switch,

机译:一种制造平面悬臂,低表面泄漏,可再现且可靠的金属凹窝接触微继电器MEMS开关的制造方法,

摘要

A method for pseudo-planarization of an electromechanical device and for forming a durable metal contact on the electromechanical device and devices formed by the method are presented. The method comprises acts of depositing various layers forming a semiconductor device. Two principal aspects of the method include the formation of a planarized dielectric/conductor layer on a substrate and the formation of an electrode in an armature of a microelectromechanical switch, with the electrode formed such that it interlocks a structural layer of the armature to ensure it remains fixed to the armature over a large number of cycles. The present invention also relates to a system and method for making MEM switches having a common ground plane. One method for making MEM switches includes: patterning a common ground plane layer on a substrate; forming a dielectric layer on the common ground plane layer; depositing a DC electrode region though the dielectric layer to contact the common ground plane layer; and depositing a conducting layer on the DC electrode region so that regions of the conducting layer contact the DC electrode region, so that the common ground plane layer provides a common ground for the regions of the conducting layer.
机译:提出了一种用于机电装置的伪平面化并且用于在机电装置上形成耐用的金属接触的方法以及通过该方法形成的装置。该方法包括沉积形成半导体器件的各个层的动作。该方法的两个主要方面包括在基板上形成平面化的介电/导体层,以及在微机电开关的电枢中形成电极,电极的形成应使其与电枢的结构层互锁,以确保电枢/结构层互锁。在许多周期内保持固定在电枢上。本发明还涉及用于制造具有公共接地平面的MEM开关的系统和方法。制造MEM开关的一种方法包括:在基板上构图公共接地层。在公共接地平面层上形成电介质层;通过介电层沉积DC电极区域以接触公共接地平面层;在DC电极区域上沉积导电层,使得导电层的区域接触DC电极区域,从而公共接地平面层为导电层的区域提供公共接地。

著录项

  • 公开/公告号GB2427758A

    专利类型

  • 公开/公告日2007-01-03

    原文格式PDF

  • 申请/专利权人 WIRELESS MEMS INCORPORATED;

    申请/专利号GB20060018409

  • 发明设计人 CHIN-SHIN CHOU;

    申请日2005-02-17

  • 分类号H01H11/00;B44C1/22;B81B3/00;B81C1/00;C03C15/00;C03C25/68;C23F1/00;H01H1/00;H01H51/22;H01H57/00;H01H59/00;H01L21/00;H01L31/00;H01P1/10;

  • 国家 GB

  • 入库时间 2022-08-21 20:26:15

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