Phonon and lattice dynamics in tri-gate FinFETs on (100) and (110) Si substrates

摘要

Phonon spectra and lattice dynamics of silicon and other molecular species are studied in detail using inelastic tunneling spectroscopy (IETS) of p-type Al/SiO2/Si tri-gate FinFETs. Phonon and vibration modes are compared for FinFETs on (100) and (110) silicon substrates. The shift in phonon frequencies depending on the direction of current flow, i.e. substrate orientation, has been demonstrated. Major phonons of Si and SiO2 are identified from the IETS spectra of the tri-gate FinFETs.