In this article, a technique for non-destructive stress analysis of thermal silicon-oxide (SiOx) film using cathodoluminescence (CL) spectroscopy is described. The uniaxial tensile tester which can be used in a scanning electron microscope (SEM) chamber was developed to apply tensile stress to the film specimen. CL spectra of SiOx film were measured under various tensile stresses. The peak position linearly increased at 7.53×10−3 eV/GPa with an increase in tensile stress. The peak intensity and half bandwidth changed with an increase in electron beam (EB) irradiation time period. Using Raman spectroscope and transmission electron microscope (TEM), it was found that EB irradiation produced silicon nanocrystals in SiOx film. The nanocrystals as well as applied stress affected CL spectra.
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机译：在本文中，描述了一种利用阴极发光（CL）光谱对热氧化硅（SiO x ）膜进行非破坏性应力分析的技术。开发了可在扫描电子显微镜（SEM）室中使用的单轴拉伸测试仪，以将拉伸应力施加到薄膜样品上。在各种拉伸应力下测量了SiO x 薄膜的CL光谱。随着拉伸应力的增加，峰位置以7.53×10 -3 eV / GPa线性增加。峰值强度和半带宽随电子束（EB）照射时间的增加而变化。使用拉曼光谱仪和透射电子显微镜（TEM），发现EB辐射在SiO x 薄膜中产生了硅纳米晶体。纳米晶体以及所施加的应力影响CL光谱。
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