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Effect of wet etching parameter to the diameter and length of silicon nanowires

机译:湿法刻蚀参数对硅纳米线直径和长度的影响

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A wet etching method for preparing silicon nanowires on silicon substrates at near room temperature is presented. The effect of experiment parameter to the silver nanoparticle forming including concentration of AgNO3,immersing time and solution temperature, and the effect of etching time to the length of silicon nanowires are investigated. It is concluded that solution temperature has more impact on diameter of silicon nanowires than concentration of AgNO3 and immersing time and longer etching time may result in longer silicon nanowires.
机译:提出了一种在室温下在硅衬底上制备硅纳米线的湿法刻蚀方法。研究了实验参数对银纳米粒子形成的影响,包括AgNO3的浓度,浸没时间和溶液温度,以及刻蚀时间对硅纳米线长度的影响。结论是:溶液温度对硅纳米线直径的影响大于对AgNO3浓度的影响,浸没时间和更长的蚀刻时间可能会导致硅纳米线的长度更长。

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