Method, based on wet etching for the production of silicon - nanowire - field effect transistors

摘要

It is a method for producing a silicon - nanowire - field effect transistor is provided on the basis of wet etching. The method comprises: determining an active region; depositing a silicon oxide - layer as a hard mask; and forming a source -, drain - and a strip-like pattern structure, the source and drain connects to one another; transmitting the pattern structure on the hard mask on silicon - material by silicon - - an etching technique; ion implantation for preventing a bottom - channel; suspending of the thin with source and drain connected by wet etching silicon - strip of material; reduction of the thin silicon strips on nanometers - size, in order to form silicon - nanowires; depositing a polycrystalline silicon - layer; formation of polysilicon - grating lines - by electron beam lithography, which the silicon - nanowires cross one another, and forming a structure, which completely surrounds the nanowires; forming a silicon oxide - side wall on each side of the polysilicon - grating lines by deposition of silicon oxide on the substrate and the subsequent etching of silicon oxide - - art; and forming a source - drain - structure by ion implantation and high temperature - annealing, and, finally, producing a nanowire - field effect transistor. The process is compatible for the production - technology of a conventional integrated circuit, and the manufacturing process is simple.