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Effects of phosphorus-doping on the microstructures, optical and electric properties in n-type Si:H thin films

机译：磷掺杂对n型Si：H薄膜的微观结构，光学和电学性质的影响

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In this paper we present a system study of phosphorus-doped hydrogenated silicon (Si:H) films prepared on glass by plasma enhanced chemical vapor deposition (PECVD) technique with radio frequency (RF) (13.56 MHz) and DC bias stimulation. The films are characterized using Raman spectroscopy,X-ray diffraction (XRD), optical transmittance and square resistance measurement.

机译：在本文中，我们对通过射频（RF）（13.56 MHz）和直流偏置刺激的等离子体增强化学气相沉积（PECVD）技术在玻璃上制备的磷掺杂氢化硅（Si：H）膜进行了系统研究。使用拉曼光谱，X射线衍射（XRD），光学透射率和方电阻测量来表征膜。

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来源
《MEMS/NEMS nano technology.》|2010年|p.32-35|共4页
会议地点 Xian(CN);Xian(CN)
作者
Jian-Ning Ding; Feng Ye; Shu-Bo Wang; Ning-Yi Yuan;
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作者单位

Center for low-dimensional materials,micro-nano devices and system,Changzhou University,1 Ge Hu Road,Changzhou 213164,Jiangsu,China Key Laboratory of New Energy Source Changzhou 213164,P.R'China;

Center for low-dimensional materials,micro-nano devices and system,Changzhou University,1 Ge Hu Road,Changzhou 213164,Jiangsu,China Key Laboratory of New Energy Source Changzhou 213164,P.R'China;

Center for low-dimensional materials,micro-nano devices and system,Changzhou University,1 Ge Hu Road,Changzhou 213164,Jiangsu,China Key Laboratory of New Energy Source Changzhou 213164,P.R'China;

Center for low-dimensional materials,micro-nano devices and system,Changzhou University,1 Ge Hu Road,Changzhou 213164,Jiangsu,China Key Laboratory of New Energy Source Changzhou 213164,P.R'China;

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中图分类光学仪器;微电子学、集成电路（IC）;微电子学、集成电路（IC）;微电子学、集成电路（IC）;
关键词
Si:H thin films:phosphine concentration:microstructures:optical and electric properties;

机译：Si：H薄膜：磷化氢浓度：微结构：光学和电学性质;

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4. Effects of phosphorus-doping on the microstructures, optical and electric properties in n-type Si:H thin films [C] . Jian-Ning Ding, Feng Ye, Shu-Bo Wang Annual Conference of the Chinese Society of Micro-Nano Technology . 2011

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Effects of phosphorus-doping on the microstructures, optical and electric properties in n-type Si:H thin films

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