Effects of phosphorus-doping on the microstructures, optical and electric properties in n-type Si:H thin films

摘要

In this paper we present a system study of phosphorus-doped hydrogenated silicon (Si:H) films prepared on glass by plasma enhanced chemical vapor deposition (PECVD) technique with radio frequency (RF) (13.56 MHz) and DC bias stimulation. The films were characterized using Raman spectroscopy, X-ray diffraction (XRD), optical transmittance and square resistance measurement.