Acousto-electron Effects in the InAs/GaAs Heterostructure with InAs Quantum Dots

摘要

In the framework of an electron-deformation model, the influence of deformation on the energy spectrum of electron and hole in the InAs/GaAs heterostructure with InAs quantum dots (QDs) is investigated. The influence of acousto-electron effects on the modulation of radiation energy at the recombination transition between the ground states of electron and hole in the InAs/GaAs heterostructure with InAs quantum dots is researched. The character of the dependence of the amplitude of the modulation of the energy of recombination radiation on the QDs size and the amplitude of the mechanical stress created by the acoustic wave on the matrix surface is established.