Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and 250μA/μm drain current

摘要

We show that downscaling the top-contact length to 13nm induces no penalty on the electrical characteristics for CVD MoS₂ FETs. We demonstrate this for devices with different gate-oxides and operating in both channel and contact-limited regimes, thus confirming carrier injection at the edge of the contact metal. Consequently, we have scaled the device footprint achieving an I_on=250μA/μm and excellent SS_min=80mV/dec for 50nm SiO₂ and 4nm HfO₂ gate oxides, respectively.