Nanoscale SiGe Double Gate MOSFET (DG-MOSFET) for Analog/RF Circuits

摘要

A simulation study of double-gate SiGe channel based metal-oxide-semiconductor field-effect transistor (DG-MOSFET) for low power analog/RF circuits is presented. The proposed device has two gates which are taken in trenches vertically to form two channels to improve output drive current (I_D). In addition to this, the DG-MOSFET also achieves substantially enhancement in transconductance (g_m) and frequency characteristics (f_t and f_max). The simulation results of DG-MOSFET are compared with its conventional counterpart. At a gate-length of 60nm, DG-MOSFET gives 3.1 times improvement in I_D, 2.9 times higher peak g_m, 2 times increase in f_t and 2.6 times higher f_max as compare to conventional planar-counterpart (CP-MOSFET).