首页> 外国专利> Analog signal amplifier circuit using a differential pair of MOSFETs (insulated-gate field effect transistors) in an input stage

Analog signal amplifier circuit using a differential pair of MOSFETs (insulated-gate field effect transistors) in an input stage

机译:在输入级中使用一对差分MOSFET(绝缘栅场效应晶体管)的模拟信号放大器电路

摘要

The present invention provides a limiter amplifier using a differential pair of MOS transistors in an input stage. A plurality of MOS transistors each having a drain and a gate connected to each other as a load transistor, are connected in series to the drains of the differential pair of MOS transistors in the input stage. MOS transistors are current-mirror-connected to the load transistors to perform feedback on the differential pair of MOS transistors in the input stage. The outputs of the differential pair of MOS transistors in the input stage are amplified by another differential pair of MOS transistors in an output stage.
机译:本发明提供了在输入级中使用差分对的MOS晶体管的限幅放大器。在输入级中,分别具有彼此连接的漏极和栅极作为负载晶体管的多个MOS晶体管串联连接至差分对MOS晶体管的漏极。 MOS晶体管通过电流镜连接到负载晶体管,以对输入级中的MOS差分对进行反馈。输入级的差分MOS晶体管对的输出被输出级的另一对差分MOS晶体管放大。

著录项

  • 公开/公告号US6194921B1

    专利类型

  • 公开/公告日2001-02-27

    原文格式PDF

  • 申请/专利权人 KABUSHIKI KAISHA TOSHIBA;

    申请/专利号US20000492190

  • 发明设计人 TAKASHI FUJIWARA;

    申请日2000-01-27

  • 分类号H03F34/50;

  • 国家 US

  • 入库时间 2022-08-22 01:05:02

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