首页> 外国专利> Control circuit for MOSFET or insulated-gate bipolar transistor power end stage has power driver stage controlled by input stage with current sinks and associated current detectors

Control circuit for MOSFET or insulated-gate bipolar transistor power end stage has power driver stage controlled by input stage with current sinks and associated current detectors

机译:MOSFET或绝缘栅双极晶体管功率端级的控制电路具有功率驱动器级,该功率驱动器级由具有电流吸收器和相关电流检测器的输入级控制

摘要

The control circuit has a power driver stage, for controlling the power end stage, which is controlled by an input stage (40), receiving the input signals, having a current sink and a current detector, with different earth potentials (GND1,GND2) for the current sink and the current detector. The input stage has an inverter for supplying inverted input signals to the input of a further current sink of the input stage, followed by its own current detector.
机译:控制电路具有功率驱动器级,用于控制功率级,该功率级由输入级(40)控制,接收具有接地电流(GND1,GND2)的具有电流吸收器和电流检测器的输入信号用于电流吸收器和电流检测器。输入级具有一个反相器,用于将反相的输入信号提供给该输入级的另一个电流吸收器的输入,随后是其自己的电流检测器。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号