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A Read-Write Aware Replacement Policy for Phase Change Memory

机译:相位变更存储器的读写感知替换策略

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Scaling DRAM will be increasingly difficult due to power and cost constraint. Phase Change Memory (PCM) is an emerging memory technology that can increase main memory capacity in a cost-effective and power-efficient manner. However, PCM incurs relatively long latency, high write energy, and finite endurance. To make PCM an alternative for scalable main memory, write traffic to PCM should be reduced, where memory replacement policy could play a vital role. In this paper, we propose a Read-Write Aware policy (RWA) to reduce write traffic without performance degradation. RWA explores the asymmetry of read and write costs of PCM, and prevents dirty data lines from frequent evictions. Simulations results on an 8-core CMP show that for memory organization with and without DRAM buffer, RWA can achieve 33.1% and 14.2% reduction in write traffic to PCM respectively. In addition, an Improved RWA (I-RWA) is proposed that takes into consideration the write access pattern and can further improve memory efficiency. For organization with DRAM buffer, I-RWA provides a significant 42.8% reduction in write traffic. Furthermore, both RWA and I-RWA incurs no hardware overhead and can be easily integrated into existing hardware.
机译:由于功率和成本约束,缩放DRAM将越来越困难。相变存储器(PCM)是一种新兴的内存技术,可以以经济高效和高效的方式提高主存储器容量。然而,PCM引起了相对长的延迟,高写能和有限耐久性。为了使PCM成为可扩展主存储器的替代方案,应减少对PCM的写入流量,其中内存替换策略可能发挥重要作用。在本文中,我们提出了一种读写感知策略(RWA),以减少写入流量而不会进行性能下降。 RWA探讨了PCM的读写成本的不对称性,并防止频繁驱逐的脏数据线。仿真结果在8核CMP上显示,对于没有DRAM缓冲区的内存组织,RWA分别可以达到33.1%和14.2%的写入流量减少到PCM。另外,提出了一种改进的RWA(I-RWA),以考虑写入访问模式,并进一步提高内存效率。对于DRAM缓冲区的组织,I-RWA的编写流量减少了显着的42.8%。此外,RWA和I-RWA都不会引发硬件开销,并且可以轻松集成到现有硬件中。

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