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AlGaAs/GaAs Heterostructure with Hybrid InSb/GaAs and GaSb/GaAs Quantum Dots and Its Optical Characteristics

机译：用混合INSB / GAAs和GASB / GAAS量子点及其光学特性的ALGAAS / GAAS异质结构

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In this work, quantum dots of type-I InSb/GaAs and type-II GaSb/GaAs are grown and capped with AlGaAs. This novel structure is expected to enhance the infrared absorption and provide long lifetime of photo-generated carriers. Preliminary power-dependent photoluminescence spectroscopy is performed to reveal a basic optical properties of the nanostructure.

机译：在这项工作中，型INERB / GAAs和II型GASB / GaAs的量子点被生长并用AlgaAs覆盖。这种新颖的结构有望增强红外吸收，并提供光产生的载体的长寿。进行初步功率依赖性光致发光光谱，以显示纳米结构的基本光学性质。

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《Compound Semiconductor Week》|2019年|486 p. :|共1页
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Thanadul Korkerdsantisuk; Katanyu Tharawatcharasart; Zon; Supachok Thainoi; Suwit Kiravittaya; Aniwat Tandaechanurat; Noppadon Nuntawong; Suwat Sopitpan; Visittapong Yordsri; Chanchana Thanachayanont; Songphol Kanjanachuchai; Somchai Ratanathammaphan; Somsak Panyakeo;
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1. Manipulation of linear and nonlinear optical properties of GaSb quantum ring in AlGaAs/GaAs/AlGaAs quantum well and AlAs/GaAs/InGaAs/AlAs double quantum well [J] . Mohamed Souhail Kehili, Rihab Sellami, Afef Ben Mansour, Optical and quantum electronics . 2020,第6期

机译：AlGaAs / GaAs / Algaas井中GASB量子环的线性和非线性光学性能的操纵，ALAS / GAAS / INGAAS / ALAS双量子阱
2. Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers [J] . Offsey S.D., Shcaff W.J. IEEE Photonics Technology Letters . 1990,第1期

机译：GaAs-AlGaAs和应变层InGaAs-GaAs-AlGaAs梯度折射率分离禁区异质结构单量子阱激光器的光学和微波性能
3. An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well [J] . Pozela Y, Pozela K, Juciene V, Semiconductors . 2007,第12期

机译：在GaAs量子阱中引入了用于极性光子的薄InAs势垒的结果，两势垒AlGaAs / GaAs / AlGaAs异质结构中的电子迁移率增加
4. AlGaAs/GaAs Heterostructure with Hybrid InSb/GaAs and GaSb/GaAs Quantum Dots and Its Optical Characteristics [C] . Thanadul Korkerdsantisuk, Katanyu Tharawatcharasart, Zon, Compound Semiconductor Week . 2019

机译：InSb / GaAs和GaSb / GaAs混合量子点的AlGaAs / GaAs异质结构及其光学特性
5. Superluminescent diodes at 2.4 microns from GaInAsSb/AlGaAsSb quantum well heterostructures for optical glucose sensing. [D] . Wootten, Michael. 2013

机译：GaInAsSb / AlGaAsSb量子阱异质结构的2.4微米超发光二极管，用于光学葡萄糖传感。
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under nonresonant ultralow-power optical excitation [O] . Puebla J., Chekhovich E.A., Hopkinson M., 2013

机译：非共振超低功率光激发下InGaas / Gaas和Gaas / alGaas量子点的动态核极化
8. Photopumped Room-Temperature Edge- and Vertical-Cavity Operation of AlGaAs-GaAs-InGaAs Quantum-Well Heterostructure Lasers Utilizing Native Oxide Mirrors [R] . Ries, M. J., Richard, T. A., Maranowski, S. A., 1994

机译：利用天然氧化物反射镜的alGaas-Gaas-InGaas量子阱异质结构激光器的光电泵浦室温边缘和垂直腔体操作

AlGaAs/GaAs Heterostructure with Hybrid InSb/GaAs and GaSb/GaAs Quantum Dots and Its Optical Characteristics

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