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AlGaAs/GaAs Heterostructure with Hybrid InSb/GaAs and GaSb/GaAs Quantum Dots and Its Optical Characteristics

机译：InSb / GaAs和GaSb / GaAs混合量子点的AlGaAs / GaAs异质结构及其光学特性

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In this work, quantum dots of type-I InSb/GaAs and type-II GaSb/GaAs are grown and capped with AlGaAs. This novel structure is expected to enhance the infrared absorption and provide long lifetime of photo-generated carriers. Preliminary power-dependent photoluminescence spectroscopy is performed to reveal a basic optical properties of the nanostructure.

机译：在这项工作中，I型InSb / GaAs和II型GaSb / GaAs的量子点被生长并被AlGaAs覆盖。期望这种新颖的结构增强红外吸收并提供光生载流子的长寿命。进行初步的取决于功率的光致发光光谱以揭示纳米结构的基本光学性质。

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来源
《Compound Semiconductor Week》|2019年|1-1|共1页
会议地点 Nara(JP)
作者
Thanadul Korkerdsantisuk; Katanyu Tharawatcharasart; Zon; Supachok Thainoi; Suwit Kiravittaya; Aniwat Tandaechanurat; Noppadon Nuntawong; Suwat Sopitpan; Visittapong Yordsri; Chanchana Thanachayanont; Songphol Kanjanachuchai; Somchai Ratanathammaphan; Somsak Panyakeo;
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SDRL Chulalongkorn University Thailand;

AOT Lab. Naresuan University Thailand;

ISE Chulalongkorn University Thailand;

NECTEC NST;

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入库时间 2022-08-26 14:41:44

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专利

1. Manipulation of linear and nonlinear optical properties of GaSb quantum ring in AlGaAs/GaAs/AlGaAs quantum well and AlAs/GaAs/InGaAs/AlAs double quantum well [J] . Mohamed Souhail Kehili, Rihab Sellami, Afef Ben Mansour, Optical and quantum electronics . 2020,第6期

机译：AlGaAs / GaAs / Algaas井中GASB量子环的线性和非线性光学性能的操纵，ALAS / GAAS / INGAAS / ALAS双量子阱
2. Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers [J] . Offsey S.D., Shcaff W.J. IEEE Photonics Technology Letters . 1990,第1期

机译：GaAs-AlGaAs和应变层InGaAs-GaAs-AlGaAs梯度折射率分离禁区异质结构单量子阱激光器的光学和微波性能
3. An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well [J] . Pozela Y, Pozela K, Juciene V, Semiconductors . 2007,第12期

机译：在GaAs量子阱中引入了用于极性光子的薄InAs势垒的结果，两势垒AlGaAs / GaAs / AlGaAs异质结构中的电子迁移率增加
4. AlGaAs/GaAs Heterostructure with Hybrid InSb/GaAs and GaSb/GaAs Quantum Dots and Its Optical Characteristics [C] . Thanadul Korkerdsantisuk, Katanyu Tharawatcharasart, Zon, Compound Semiconductor Week . 2019

机译：用混合INSB / GAAs和GASB / GAAS量子点及其光学特性的ALGAAS / GAAS异质结构
5. Superluminescent diodes at 2.4 microns from GaInAsSb/AlGaAsSb quantum well heterostructures for optical glucose sensing. [D] . Wootten, Michael. 2013

机译：GaInAsSb / AlGaAsSb量子阱异质结构的2.4微米超发光二极管，用于光学葡萄糖传感。
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under nonresonant ultralow-power optical excitation [O] . Puebla J., Chekhovich E.A., Hopkinson M., 2013

机译：非共振超低功率光激发下InGaas / Gaas和Gaas / alGaas量子点的动态核极化
8. Photopumped Room-Temperature Edge- and Vertical-Cavity Operation of AlGaAs-GaAs-InGaAs Quantum-Well Heterostructure Lasers Utilizing Native Oxide Mirrors [R] . Ries, M. J., Richard, T. A., Maranowski, S. A., 1994

机译：利用天然氧化物反射镜的alGaas-Gaas-InGaas量子阱异质结构激光器的光电泵浦室温边缘和垂直腔体操作

AlGaAs/GaAs Heterostructure with Hybrid InSb/GaAs and GaSb/GaAs Quantum Dots and Its Optical Characteristics

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