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Wavelet-based calculation of the transmission coefficient for tunneling events in Tunnel-FETs

机译:基于小波的隧道FET隧道事件传输系数计算

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Recently, the Tunnel-FET is gaining interest due to its possibility to overcome the 60 mV/dec subthreshold slope limitation of the standard MOSFET. Due to its band-to-band (B2B) tunneling-based current transport mechanism, the requirements for sufficient tunneling models are raising. By taking into account various barrier shapes, tunneling distances and energy levels, the wavelet-based calculation of the transmission coefficient offers the possibility to calculate tunneling events as B2B tunneling at the junctions and gate leakage current in an accurate way. A comparison of the wavelet solution with the exact solution of the Schro?dinger equation for rectangular barriers and the Wentzel-Kramers-Brillouin (WKB) approximation for triangular shaped barriers is presented in this paper.
机译:最近,由于其可能克服标准MOSFET的60 MV / DEC亚阈值限制,隧道 - FET正在获得兴趣。由于其带对带(B2B)隧道的电流传输机构,因此对足够的隧道模型的要求升高。通过考虑各种屏障形状,隧道距离和能量水平,传输系数的基于小波的计算能够以准确的方式计算作为B2B隧道的B2B隧道的隧道事件。本文提出了对矩形屏障的精确溶液的小波溶液与施矩屏障的精确溶液的比较,以及三角形屏障的vidzel-kramers-布里渊(WKB)近似。

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