Wavelet-based calculation of the transmission coefficient for tunneling events in Tunnel-FETs

摘要

Recently, the Tunnel-FET is gaining interest due to its possibility to overcome the 60 mV/dec subthreshold slope limitation of the standard MOSFET. Due to its band-to-band (B2B) tunneling-based current transport mechanism, the requirements for sufficient tunneling models are raising. By taking into account various barrier shapes, tunneling distances and energy levels, the wavelet-based calculation of the transmission coefficient offers the possibility to calculate tunneling events as B2B tunneling at the junctions and gate leakage current in an accurate way. A comparison of the wavelet solution with the exact solution of the Schrödinger equation for rectangular barriers and the Wentzel-Kramers-Brillouin (WKB) approximation for triangular shaped barriers is presented in this paper.