Investigation of Gassensitive Characteristics of Sensors Based on SiO_2SnO_x-CNT Films

摘要

Annotation. Resistive gas sensors based on the SiO_2SnO_x-CNT nanocomposite thin film are designed. Films are prepared by sol-gel technique from Tetraethoxysilane solutions with addition of tin and CNT compounds. It is established that the SiO_2SnOx-CNT films possess semiconductor properties. Produced gas sensors are sensitive to nitrogen dioxide at low (<50°C) operating temperatures. X-ray spectroscopy (XPS) technique reveals that tin is more likely in SnO_2 phase that improves gas sensitive characteristics.