Analytical Modeling of the Temperature Dependent Microwave Noise in AlGaN/GaN HEMTs

摘要

In this paper, we present the analytical modeling on the temperature dependent microwave noise in AlGaN/GaN HEMTs on Si substrate over a wide temperature range from -50 to 200°C. The noise source coefficients and small signal equivalent circuit parameters (ECPs) were extracted and their variations over temperature were fitted using a simple quadratic relationship. An analytical model for the overall noise parameters including temperature dependence is proposed based on the Pucel's PRC model and verified with the measured temperature-dependent noise parameters. The feedback capacitance C_(gd) was found to be important to accurately simulate all the measured noise parameters over temperature.