Integrated front-end/back-end simulation of electromagnetic fields, Lorentz force effects and fast current surges in microelectronic protection devices

摘要

We presented a full simulation picture of fast-transient current surges including self-induced electromagnetic effects as well as a method to compute the impact of the Lorentz force. We applied the proposed method to an ESD protection structure consisting of an SRC and diode. We observed that the magnetic effects, with and without inclusion of the Lorentz force deflection of the currents have a negligible effect on the circuit-element characteristics. However, the local current densities inside the device are effected. This will impact the device reliability for electromigration robustness. Finally, we emphasize that the simulation techniques of this paper have a much wider applicability than presented here. For example, the simulation tools may be used to analyze magnetic field sensors, integrated passives and large-area substrate effects.