Computation of Self-Induced Magnetic Field Effects Including the Lorentz Force for Fast-Transient Phenomena in Integrated-Circuit Devices

摘要

We present a full physical simulation picture of the electromagnetic phenomena combining electromagnetic (EM) fields and carrier transport in semiconductor devices (TCAD) in the transient regime. The simulation tool computes the EM fields in a self-consistent way and the resulting magnetic fields are incorporated in the computation of the current sources that get modified by the Lorentz force (LF).