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Determining Hole Mobility of Zinc Phthalocyanine Thin Films by Light-Intensity-Dependent Current-Voltage Characteristics

机译:通过光强度依赖性电流 - 电压特性确定锌酞菁薄膜的空穴迁移率

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Carrier mobility is a basic parameter of organic semiconductors. In this paper, hole mobility of zinc phthalocyanine (ZnPc) thin films was determined by light-intensity-dependent current-voltage characteristics. Firstly, built-in voltage, V_(bi), of the organic diode with the structure of "ITO/zinc phthalocyanine (ZnPc)/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP)/Al" was measured as 0.45 V by using saturation photovoltage method. Based on the value of V_(bi), the hole mobility of ZnPc thin film was (1.619 ± 0.06) × 10~(-6) cm~2 V~(-1) s~(-1) by fitting the measured photocurrent-voltage characteristic with the established theory of space-charge-limited photocurrent conduction. The measured carrier mobility coincides with that reported in other literature.
机译:载流子迁移率是有机半导体的基本参数。本文采用光强度依赖性电流 - 电压特性确定锌酞菁(ZnPC)薄膜的空穴迁移率。首先,具有“ITO /锌酞菁(ZnPC)/ 2,9-二甲基-4,7-二苯基-1,10-菲(BCP)的结构二极管的内置电压,V_(BI),其具有”ITO /锌酞菁(ZnPC)/ 2,9-二甲基-4,7-二苯基-1,10-菲林机(BCP)/使用饱和光伏法测量为0.45V。基于V_(BI)的值,通过装配测量的光电流,ZnPC薄膜的空穴迁移率(1.619±0.06)×10〜(-6)cm〜2V〜(-1)S〜(-1) - 采用既定的空间电荷限制光电流传导理论的抗动特性。测量的载体迁移率与其他文献中报道的载体迁移率一致。

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