A double-tail sense amplifier for low-voltage SRAM in 28nm technology

摘要

A double-tail sense amplifier (DTSA) is designed as a drop-in replacement for a conventional SRAM sense amplifier (SA), to enable a robust read operation at low voltages. A pre-amplification stage helps reduce the offset voltage of the sense amplifier by magnifying the input of the regeneration stage. The self-timed regenerative latch simplifies the timing logic so the DTSA can replace the SA with no area overhead. A test chip in 28nm technology achieves 56% error rate reduction at 0.44V. The proposed scheme achieves 50mV of VDDmin reduction compared to commercial SRAM with a faster timing option that demonstrates a smaller bitline swing.