50nm - gate all around (GAA) - silicon on nothing (SON) - devices: a simple way to co-integration of GAA transistors within bulk MOSFET process

摘要

Far the first time, bath GAA and bulk devices were shown operational an the same chip. Nat all issues have been salved yet (gate materials, access resistance) but already the first-try results are very encouraging: lon= 170μA/μm @ 1.2V and gate oxide of 20A. Thanks to the GM intrinsic immunity to SCE, its DIBL was as small as 10mV compared with 6OOmV on bulk control devices. Calibrating 2D simulator an this electrical data, the performance of GAA was estimated to at least 1500μA/μm @ 1V with comfortable gate oxide of 20A, once having corrected far the large R{sub}(access) (～3OOOΩ), that was simply due to non-optimal mask layout we used in this first device realization.