A novel simple shallow trench isolation (SSTI) technology using high selective CeO{sub}2 slurry and liner SiN as a CMP stopper

摘要

A novel Simple Shallow Trench Isolation technology, SSTI, has been developed. SSTI consists of direct trench etching masked only with the photo resist, trench oxidation, liner SiN deposition, CVD oxide trench fill, densification, and highselective CMP. CMP stops at the liner SiN with the residual SiN thickness range of less than 2 nm and without micro-scratch. High selective CMP eliminates the field recess variation which is one of the drawbacks of the conventional STI. SSTI is apromising candidate for the future isolation technology.