High Vth enhancement mode GaN power devices with high ID, max using hybrid ferroelectric charge trap gate stack

摘要

In this work, we demonstrate a new concept for realizing high threshold voltage (V) E-mode GaN power devices with high maximum drain current (I). A gate stack ferroelectric blocking film with charge trap layer, achieved a large positive shift of V. The E-mode GaN MIS-HEMTs with high V of 6 V shows I 720 mA/mm. The breakdown voltage is above 1100 V.