首页> 外文会议> >Comparative study between wet and dry etching of silicon for microchannels fabrication
【24h】

Comparative study between wet and dry etching of silicon for microchannels fabrication

机译:湿法和干法刻蚀硅用于微通道制造的比较研究

获取原文
获取原文并翻译 | 示例

摘要

In this work we present a comparative study of two processes for the fabrication of an array of microchannelsfor microfluidics applications, based on integrated-circuit technology process steps, such as lithography and dryetching. Two different methods were investigated in order to study the resulting microstructures: wet and drydeep etching of silicon substrate. The typical etching depth necessary to the target application is 50 μm.
机译:在这项工作中,我们将基于集成电路技术的工艺步骤(如光刻和干法\固网),对两种用于微流体应用的微通道阵列制造工艺进行比较研究。为了研究所得的微观结构,研究了两种不同的方法:湿法和干法\深\深蚀刻硅衬底。目标应用所需的典型蚀刻深度为50μm。

著录项

  • 来源
    《》|2019年|1093015.1-1093015.5|共5页
  • 会议地点 0277-786X;1996-756X
  • 作者单位

    Electrical Engineering Department – CCET - UFSCar – São Carlos / SP – Brazil;

    Electrical Engineering Department – CCET - UFSCar – São Carlos / SP – Brazil;

    LSIEPUSP – São Paulo / SP - Brazil;

    imec – Leuven - Belgium;

    LPD-IFGW-UNICAMP – Campinas / SP - Brazil;

    LPD-IFGW-UNICAMP – Campinas / SP - Brazil;

    FEEC – UNICAMP – Campinas / SP - Brazil CCS – UNICAMP – Campinas/SP – Brazil;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号