COMPOSITION FOR WET ETCHING CAPABLE OF ETCHING ONLY A SILICON OXIDE LAYER WITHOUT INFLUENCING THE ETCHING OF A SILICON NITRIDE LAYER

摘要

PURPOSE: A composition for wet etching is provided to minimize an etching rate to a silicon oxide layer, to selectively remove only the silicon oxide layer, and to ensure high-temperature stability.;CONSTITUTION: A composition for wet etching a silicon oxide layer comprises 0.01-2 weight% of a silicon compound of chemical formula 1, 0.001-1 weight% of an oxime compound of chemical formula 2, and 97-99.98 weight% of phosphoric acids. In chemical formulas 1 and 2, R^1, R^2, R^3 and R^4 are independently selected from hydrogen, (C1-20)alkyl, (C1-20)alkoxy, (C2-20)alkenyl, (C3-20)cycloalkyl, amino(C1-20)alkyl, amino(C1-10)alkylamino(C1-10)alkyl, (C6-20)aryl, (C1-20)alkylcarbonyl, (C1-20)alkylcarbonyloxy and cyano(C1-10)alkyl.;COPYRIGHT KIPO 2011