COMPOSITION FOR ETCHING A SILICON OXIDE LAYER WITH HIGH ETCHING SELECTIVITY OF A SILICON OXIDE LAYER TO A NITRIDE LAYER AND A METHOD FOR ETCHING A SILICON OXIDE LAYER USING THE SAME

摘要

PURPOSE: A composition for etching a silicon oxide layer is provided to lowering an etching rate of various nitride layers while maintaining high etching rate of various silicon oxide layers presented a substrate.;CONSTITUTION: A composition for etching a silicon oxide layer comprises hydrogen fluoride, anionic polymer and deionized water. The anionic polymer is included in the amount of 0.001-2 weight% based on the total amount of the composition for etching a silicon oxide layer. The etching selectivity of a silicon oxide layer to a nitride layer is 80 or more. The anionic polymer is selected from the group consisting of polyacrylic acid, polysulfonic acid, polyacrylamide/acrylic acid copolymer, polyacrylic acid/sulfonic acid copolymer, polysulfonic acid/acrylamide copolymer, polyacrylic acid/malonic acid copolymer, and their combination.;COPYRIGHT KIPO 2010