Strong Hole Self-Doping in LaMnO_3 Thin Film on a-SiO_2 Substrate produced by Metal Organic Decomposition Method

摘要

We have studied the strong hole self-doping into LaMn03 (LMO) thin films produced by metal organic decomposition (MOD) method. With different heat treatment conditions, LMO thin films have been prepared by the MOD method in the 100 % O_2 gas atmosphere. We consider that the excess of O~(2-) ions in LMO thin films induces the strong hole self-doping into LMO ones. The quantity of excess O~(2-) ions in LMO is sensitive to the heat treatment conditions of the LMO production, especially the temperature, time and atmosphere gas. Although LMO single crystal is an antiferromagnetic insulator, LMO thin films we have produced in the 100 % O_2 gas atmosphere by use of the MOD method shows the properties of ferromagnetic metal.